modified integrate calculation + added displacement current calculation #228
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Features
This pull request introduces the capability to:
integrate_displacement.The term$I_1 = \int_\Omega \nabla T \cdot \mathbf{j} dx$ can be obtained via $I_2 = \int_\Omega T \nabla \cdot \mathbf{j} dx$ via
integrate_edgebatch, whileintegral_nodebatch.Motivation for displacement calculation
Consider a bipolar drift-diffusion model
For semiconductors (van Roosbroeck), we have$z_1 = - z_2 = 1$ , while in electrochemistry (Nernst–Planck) $R = 0$ .
The total current is defined as ($\mathbf{j}_\psi = - \varepsilon \nabla \psi$ )
Currently, the displacement current is not available, although it plays an important role in transient drift–diffusion-type equations involving the electric potential.$\int_\Gamma \partial_t \mathbf{j}_\psi \cdot \boldsymbol{\nu} dS$ .
The newest example 161 shows that, in the non-stationary regime, the total current with and without displacement contributions differs.
Therefore, we introduce the new method
integrate_displacementto calculateMotivation to have access to both integral contributions
It is also useful to have access to both integral contributions$I_1$ , $I_2$ .
Using the test-function reformulation of the surface integral into a volume integral, we obtain for the above model
The second term vanishes in most applications once the PDE model is inserted:
when$R = 0$ or $z_1 = - z_2$ .
Instead of the definition$I_\alpha := \int_\Gamma \mathbf{j}_\alpha \cdot \boldsymbol{\nu} dS$ , in semiconductor applications, it is often more natural to define the carrier-dependent total currents as
It would be interesting to verify, in the electrochemical context, whether there is also a discrepancy in the definition of the individual carrier-dependent currents.$\int_\Omega \nabla T \cdot \mathbf{j}_\alpha dx$ is necessary.
In any case, to be at least consistent with the semiconductor device community, access to the integrals
This is now provided via
integrate_edgebatch.